Gallium(III) oxide
Gallium(III) oxide
CAS: 12024-21-4
Molecular Formula: Ga2O3
Gallium(III) oxide - Names and Identifiers
| Name | Gallium(III) oxide |
| Synonyms | Galliumoxide galliumtrioxide Gallium(Ⅲ) oxide GalliuM(Ⅵ) oxide digallium trioxide Gallium(III) oxide Galliumoxidewhitepowder oxo-oxogallanyloxy-gallane digallium oxygen(-2) anion Gallium(III) oxide (Ga2O3) |
| CAS | 12024-21-4 |
| EINECS | 234-691-7 |
| InChI | InChI=1/2Ga.3O/rGa2O3/c3-1-5-2-4 |
| InChIKey | QZQVBEXLDFYHSR-UHFFFAOYSA-N |
Gallium(III) oxide - Physico-chemical Properties
| Molecular Formula | Ga2O3 |
| Molar Mass | 187.44 |
| Density | 6.44g/mLat 25°C |
| Melting Point | 1740 °C |
| Water Solubility | Soluble in acids. Insoluble in water |
| Solubility | Slightly soluble in hot acid and alkali, insoluble in water |
| Appearance | White powder or crystalline powder |
| Specific Gravity | 6.44 |
| Color | White |
| Merck | 14,4346 |
| Storage Condition | Sealed in dry,Room Temperature |
| Stability | Stable. Incompatible with magnesium. |
| Refractive Index | 1.92 |
| MDL | MFCD00011020 |
| Use | Used as a semiconductor material for the determination of impurities in uranium in spectral analysis |
Gallium(III) oxide - Risk and Safety
| Safety Description | 24/25 - Avoid contact with skin and eyes. |
| WGK Germany | 2 |
| RTECS | LW9650000 |
| TSCA | Yes |
| HS Code | 28259090 |
Gallium(III) oxide - Nature
Open Data Verified Data
White triangular crystalline granules. White small triangular crystals. There are hexagonal A- type and monoclinic p-type. Heating to red color in a stream of hydrogen and oxygen reduces to gallium oxide. Slightly soluble in hot acid and alkali, insoluble in water. The relative density was 6. 48 (Type A) and 5.88 (type p). Melting point 1900 °c.
Last Update：2025-06-10 22:55:16
Gallium(III) oxide - Preparation Method
Open Data Verified Data
dissolve Gallium trichloride in hot water, add a high-concentration hot solution of sodium bicarbonate, boil until all gallium salts are converted into Gallium hydroxide precipitate, wash with hot water, and then burn at 600 ° C, p-type gallium oxide was obtained. Alternatively, high-purity metallic gallium is electrolyzed as an anode, and gallium is dissolved in 5 to 20% sulfuric acid to obtain a gallium sulfate solution. After filtration, aqueous ammonia was added to the filtrate, the mixture was concentrated by heating and cooled to obtain ammonium gallium sulfate crystals. Recrystallization was repeated with water and dried at 105 °c. In the presence of excess oxygen in 800 ℃ ignition, purity 99. 99% ~ 999% high purity products.
Last Update：2025-06-10 22:55:16
Gallium(III) oxide - Introduction
Analytical reagents. Determination of impurities in uranium by spectral analysis.
Last Update：2022-10-16 17:12:36
Gallium(III) oxide - Application
Open Data Verified Data
used as a high purity analytical reagent for the preparation of semiconductor materials in the electronics industry.
Last Update：2025-08-19 16:24:40
Gallium(III) oxide - Safety
Open Data Verified Data
non-toxic. Store in a cool, dry warehouse.
Last Update：2025-06-10 22:55:16
Gallium(III) oxide - Reference Information
| EPA chemical information | Information provided by: ofmpub.epa.gov (external link) |
| introduction | gallium oxide is a wide band gap semiconductor with a band gap Eg = 4.9eV. it has good conductivity and luminous characteristics. therefore, it has broad application prospects in optoelectronic devices and is used as an insulating layer of Ga-based semiconductor materials and an ultraviolet filter. These are the traditional application fields of gallium oxide, and its future power, especially high-power application scenarios, is more worthy of expectation. |
| Properties | Ga 2 O 3 is an oxide of gallium metal and is also a semiconductor compound. Up to now, its crystal form has been confirmed to have five kinds of α, β, γ, δ and ε, of which β structure is the most stable. Most of the studies related to the crystal growth and physical properties of Ga 2 O 3 revolve around the β structure. Researchers have trial-produced metal semiconductor field effect transistors. Although they belong to a simple structure without a protective film passivation film, the samples have shown high withstand voltage and low leakage current. When using silicon carbide and gallium nitride to manufacture components of the same structure, it is usually difficult to achieve the indicators of these samples. |
| application | gallium oxide is an emerging power semiconductor material, its band gap is larger than silicon, gallium nitride and silicon carbide, and its application advantages in high power applications are becoming more and more obvious. But gallium oxide will not replace SiC and GaN, the latter two are the next generation of main semiconductor materials after silicon. gallium oxide is more likely to play a role in extending the available power and voltage range of ultra wide band gap system. The most promising applications may be high-voltage rectifiers in power regulation and distribution systems, such as electric vehicles and photovoltaic solar systems. |
| preparation method | gallium oxide preparation mainstream method: according to the difference of raw material state in the crystal growth process of β-Ga2O3, crystal growth methods can be divided into: solution method, melt method, gas phase method, solid phase method, etc. The melt method is the earliest and most widely used crystal growth method, and it is also a commonly used method for growing β-Ga2O3 bulk single crystals. High-quality, low-cost β-Ga2O3 bulk single crystals can be grown by the melt method, of which there are two most commonly used growth methods: the pull method and the guide mode method. |
| Uses | Gallium oxide can be used as a scientific research reagent for biochemical research; it can be used as an insulating layer of Ga-based semiconductor materials and ultraviolet filters; it can be used as a semiconductor material for spectral analysis and determination of impurities in uranium; it can also be used to produce gadolinium garnet, catalysts, chemical reagents, etc, raw materials for preparing Sr2CuGaO3S (examples of rare cone gallium). |
| production method | 1. add NaHCO3 high concentration hot water solution to gallium trichloride GaCl3 hot water solution and boil until all the hydroxide of gallium is precipitated. Wash the precipitate with hot water until there is no Cl-, and calcine above 600 ℃ to obtain β-Ga2O3. When residual NH4Cl, it reacts with Ga2O3 at 250 ℃ to generate volatile GaCl3. 2. This is the preparation method of high purity Ga2O3. The high purity metal Ga is used as anode, dissolved in 5% ~ 20% H2SO4 solution, ammonia water is added to the solution, cooled, Ga(NH4)(SO4)2 is repeatedly crystallized, dried at 105 ℃, and burned at 800 ℃ for 2 hours under the condition of excess oxygen to obtain a product with a purity of 99 99% ~ 99.9999%. 3. Weigh 1kg of 99.9999% high-purity gallium into a three-neck flask, add high-purity nitric acid to dissolve gallium completely, then filter, pour the filtrate into the three-neck flask, move to an electric furnace for evaporation (in a fume hood), concentrate to near crystallization, and move the solution to a large evaporation dish to evaporate until dry. The evaporated Ga(NO3)3 is burned in a muffle furnace, the temperature is controlled at 550 ℃, burned for 5 hours, and the finished product is taken out after cooling to obtain 1.2kg of high purity gallium oxide. |
| category | toxic substances |
| toxicity classification | low toxicity |
| acute toxicity | oral administration-mouse LD50: 10000 mg/kg; Abdominal cavity-mouse LD50: 5000 mg/kg |
| storage and transportation characteristics | warehouse ventilation and low temperature drying |
| fire extinguishing agent | dry powder, foam, sand, carbon dioxide, mist water |
| occupational standard | STEL 3 mg/m3 |
Last Update：2024-04-10 22:29:15
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